Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma

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dc.contributor.author Gómez-Arribas, Francisco J.
dc.contributor.author Garrido, Javier
dc.contributor.author Martínez Rodríguez, Javier
dc.contributor.author Piqueras, Juan
dc.contributor.other UAM. Departamento de Física Aplicada es_ES
dc.contributor.other UAM. Departamento de Ingeniería Informática es_ES
dc.date.accessioned 2015-05-29T14:03:19Z
dc.date.available 2015-05-29T14:03:19Z
dc.date.issued 1996-01
dc.identifier.citation Journal of the Electrochemical Society 143.1 (1996): 271-277 en_US
dc.identifier.issn 0013-4651 (print) en_US
dc.identifier.issn 1945-7111 (online) en_US
dc.identifier.uri http://hdl.handle.net/10486/666478
dc.description The archival version of this work was published in Journal of the electrochemical society 143.1 (1996): 271-277 en_US
dc.description.abstract Hydrogenated amorphous silicon carbide, a‐SiC:H, has been deposited by electron cyclotron resonance plasmas. Operating in methane excess (Formula flow ratios between 2 and 4) and at high enough microwave powers, the deposited SiC films are close to stoichiometric. In these SiC layers, only small traces of the Formula and Formula stretching bands can be detected. Rapid thermal annealing leads to nearly complete dehydrogenation of the SiC layers deposited under these conditions as deduced from ellipsometric and infrared spectroscopy. en_US
dc.format.extent 7 pág. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher Electrochemical Society, Inc. en_US
dc.relation.ispartof Journal of The Electrochemical Society en_US
dc.rights © The Electrochemical Society, Inc. 1996. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS) en_US
dc.subject.other Plasma deposition en_US
dc.subject.other Annealing en_US
dc.subject.other Cyclotron Resonance en_US
dc.subject.other Carbon compounds en_US
dc.subject.other Silicon compounds en_US
dc.subject.other Hydrogen compounds en_US
dc.subject.other Fourier transform spectroscopy en_US
dc.subject.other Infrared spectroscopy en_US
dc.subject.other Spectrochemical analysis en_US
dc.title Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma en_US
dc.type article en_US
dc.subject.eciencia Telecomunicaciones es_ES
dc.relation.publisherversion http://dx.doi.org/10.1149/1.1836421
dc.identifier.doi 10.1149/1.1836421 en_US
dc.identifier.publicationfirstpage 271
dc.identifier.publicationissue 1
dc.identifier.publicationlastpage 277
dc.identifier.publicationvolume 143
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.contributor.group Laboratorio de Microelectrónica es_ES
dc.rights.accessRights openAccess en
dc.authorUAM Piqueras Piqueras, Juan (259291)


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