Thermoelectric power of bulk black-phosphorus

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dc.contributor.author Flores, E.
dc.contributor.author Ares, J. R.
dc.contributor.author Castellanos-Gomez, A.
dc.contributor.author Barawi, M.
dc.contributor.author Ferrer, I. J.
dc.contributor.author Sánchez, C.
dc.contributor.other UAM. Departamento de Física de Materiales es_ES
dc.date.accessioned 2016-11-03T14:46:29Z
dc.date.available 2016-11-03T14:46:29Z
dc.date.issued 2015-01-12
dc.identifier.citation Applied Physics Letters 106.2 (2015): 022102 en_US
dc.identifier.issn 0003-6951 (print) es_ES
dc.identifier.issn 1077-3118 (online) es_ES
dc.identifier.uri http://hdl.handle.net/10486/674735
dc.description.abstract The potential of bulk black-phosphorus, a layered semiconducting material with a direct band gap of ∼0.3 eV, for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 ± 10 μV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40% while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work indicates the prospective use of black-phosphorus in thermoelectric applications such as thermal energy scavenging, which typically require devices with high performance at temperatures near room temperature en_US
dc.description.sponsorship Authors from MIRE Group acknowledge the support of the Ministry of Economy and Competitiveness (MINECO) for this research (Contract No. MAT2011-22780). They also thank technical support from Mr. F. Moreno. E. Flores acknowledges to the Mexican National Council for Science and Technology (CONACyT) for providing the funding necessary to complete his PhD. A.C.-G. acknowledges financial support through the FP7-Marie Curie Project PIEF-GA-2011-300802 (“STRENGTHNANO”) and the Fundación BBVA through the grant “I Convocatoria de Ayudas Fundación BBVA a Investigadores, Innovadores y Creadores Culturales” (“Semiconductores ultradelgados: hacia la optoelectrónica flexible”) en_US
dc.format.extent 4 pag. es_ES
dc.format.mimetype application/pdf en
dc.language.iso eng en
dc.publisher American Institute of Physics Publising LLC en_US
dc.relation.ispartof Applied Physics Letters en_US
dc.rights © 2015 AIP Publishing LLC en_US
dc.subject.other Electric power factor en_US
dc.subject.other Energy gap en_US
dc.subject.other Semiconducting films en_US
dc.subject.other Electrical resistances en_US
dc.subject.other Naturally occurring en_US
dc.subject.other Near room temperature en_US
dc.subject.other P type conductivity en_US
dc.subject.other P type semiconductor en_US
dc.subject.other Semiconducting materials en_US
dc.subject.other Temperature range en_US
dc.subject.other Thermoelectric application en_US
dc.title Thermoelectric power of bulk black-phosphorus en_US
dc.type article en
dc.subject.eciencia Física es_ES
dc.date.embargoend 2015-01-12
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4905636 es_ES
dc.identifier.doi 10.1063/1.4905636 es_ES
dc.identifier.publicationfirstpage 022102 es_ES
dc.identifier.publicationissue 2 es_ES
dc.identifier.publicationlastpage 022102 es_ES
dc.identifier.publicationvolume 106 es_ES
dc.relation.projectID Gobierno de España. MAT2011-22780 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/300802 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion en
dc.rights.accessRights openAccess en


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