Show simple item record

dc.contributor.authorSrour, W.
dc.contributor.authorTrabada, Daniel G.
dc.contributor.authorMartínez, J. I.
dc.contributor.authorFlores Sintas, Fernando 
dc.contributor.authorOrtega Mateo, José 
dc.contributor.authorAbuín, M.
dc.contributor.authorFagot-Revurat, Y.
dc.contributor.authorKierren, B.
dc.contributor.authorTaleb-Ibrahimi, A.
dc.contributor.authorMalterre, D.
dc.contributor.authorTejeda, A.
dc.contributor.otherUAM. Departamento de Física Teórica de la Materia Condensadaes_ES
dc.date.accessioned2016-10-13T11:00:21Z
dc.date.available2016-10-13T11:00:21Z
dc.date.issued2015-05-13
dc.identifier.citationPhysical Review Letters 114.19 (2015): 196101en_US
dc.identifier.issn0031-9007 (print)es_ES
dc.identifier.issn1079-7114 (online)es_ES
dc.identifier.urihttp://hdl.handle.net/10486/674129
dc.description.abstractDynamical phase transitions are a challenge to identify experimentally and describe theoretically. Here, we study a new reconstruction of Sn on silicon and observe a reversible transition where the surface unit cell divides its area by a factor of 4 at 250°C. This phase transition is explained by the 24-fold degeneracy of the ground state and a novel diffusive mechanism, where four Sn atoms arranged in a snakelike cluster wiggle at the surface exploring collectively the different quantum mechanical ground statesen_US
dc.description.sponsorshipThis work was supported by the French Agence Nationale de la Recherche (ANR) under Contract SurMott, No. NT-09-618999, and by Spanish Ministerio de Economía y Competitividad, Project No. MAT2014-59966-Ren_US
dc.format.extent5 pag.es_ES
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.rights©2015 American Physical Societyen_US
dc.subject.otherGround stateen_US
dc.subject.otherQuantum theoryen_US
dc.subject.otherDiffusive mechanismsen_US
dc.subject.otherDynamical phase transitionen_US
dc.subject.otherQuantum mechanicalen_US
dc.subject.otherSurface unitsen_US
dc.titleUltrafast atomic diffusion inducing a reversible (2√3x2√3)R30º <--> (√3x√3)R30º transition on Sn/Si (111): Ben_US
dc.typearticleen
dc.subject.ecienciaFísicaes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevLett.114.196101es_ES
dc.identifier.doi10.1103/PhysRevLett.114.196101es_ES
dc.identifier.publicationfirstpage196101-1es_ES
dc.identifier.publicationissue19es_ES
dc.identifier.publicationlastpage196101-5es_ES
dc.identifier.publicationvolume114es_ES
dc.relation.projectIDGobierno de España. MAT2014-59966-Res_ES
dc.type.versioninfo:eu-repo/semantics/publishedVersionen
dc.rights.accessRightsopenAccessen
dc.facultadUAMFacultad de Ciencias
dc.institutoUAMCentro de Investigación en Física de la Materia Condensada (IFIMAC)


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record